Datasheet4U Logo Datasheet4U.com

2SK410 - N-Channel MOSFET

Key Features

  • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary.
  • breakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch.
  • Tch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4100LS N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4100LS N-Channel MOSFET Transistor Inchange Semiconductor
2SK4100LS N-Channel Silicon MOSFET ON Semiconductor
2SK4101FG N-Channel MOSFET Sanyo
2SK4101FS N-Channel MOSFET Sanyo

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK415 HIGH SPEED POWER SWITCHING
2SK416 N-Channel MOSFET
2SK408 N-Channel MOSFET
2SK409 N-Channel MOSFET
2SK429 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1.