Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
○ Switching Regulator Applications
Unit: mm
- Low drain- source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
- High forward transfer admittance : |Yfs| = 8.5 S (typ.)
- Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
- Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...