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2SK975 - Silicon N-Channel MOS FET

Datasheet Summary

Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel te.

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Datasheet Details

Part number 2SK975
Manufacturer Hitachi Semiconductor
File Size 41.52 KB
Description Silicon N-Channel MOS FET
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2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 60 ±20 1.5 4.5 1.
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