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3SK233
Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier
Feature
• Low voltage operation. • Superior cross modulation characteristics.
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
——————————————————————–
Drain to source voltage VDS 12
V
——————————————————————–
Gate 1 to source voltage VG1S ±10
V
——————————————————————–
Gate 2 to source voltage VG2S ±10
V
——————————————————————–
Drain current
ID 35
mA
——————————————————————–
Channel power dissipation Pch
150
mW
——————————————————————–
Channel temperature
Tch 125
°C
——————————————————————–
Storage temperature
Tstg –55 to +125 °C
——————————————————————–
MPAK-4
2 3
1 4
1. Source 2. Gate 1 3. Gate 2 4.
3SK233 Datasheet
