Part 3SK233
Description Silicon N-Channel Dual Gate MOS FET
Manufacturer Hitachi Semiconductor
Size 350.38 KB
Hitachi Semiconductor

3SK233 Overview

Key Features

  • Low voltage operation
  • Superior cross modulation characteristics. Table 1 Item Symbol Rating Unit
  • Drain to source voltage VDS 12 V
  • Gate 1 to source voltage VG1S ±10 V
  • Gate 2 to source voltage VG2S ±10 V
  • Drain current ID 35 mA
  • Channel power dissipation Pch 150 mW
  • Channel temperature Tch 125 °C
  • Storage temperature Tstg –55 to +125 °C
  • MPAK-4 2 3 1 4