3SK239A - GaAs Dual Gate MES FET

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Hitachi Semiconductor

Part number	3SK239A
Manufacturer	Hitachi Semiconductor
File Size	41.66 KB
Description	GaAs Dual Gate MES FET
Datasheet	3SK239A Datasheet
Additional preview pages of the 3SK239A datasheet.

Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz).
Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12.
6.
6 50 100 125.
55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C).

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Published: Mar 30, 2005 |