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3SK239A - GaAs Dual Gate MES FET

Key Features

  • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz).
  • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12.
  • 6.
  • 6 50 100 125.
  • 55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C).

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
3SK233 Silicon N-Channel Dual Gate MOS FET
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3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 –6 –6 50 100 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min — –6 –6 — — 14 — — 20 — — — 17 — Typ — — — — — 19 –1.2 –1.2 31 0.58 0.36 0.028 19 1.3 Max 50 — — –5 –5 28 –1.6 –1.6 — 1.0 0.6 0.05 — 2.