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3SK239A Datasheet Gaas Dual Gate Mes Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier.

Key Features

  • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz).
  • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12.
  • 6.
  • 6 50 100 125.
  • 55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C).

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