3SK239A Overview
3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier.
3SK239A Key Features
- Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz)
- Capable of low voltage operation
Datasheet Details
| Part number | 3SK239A |
|---|---|
| Datasheet | 3SK239A_HitachiSemiconductor.pdf |
| File Size | 41.66 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | GaAs Dual Gate MES FET |
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