3SK239A Description
3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier.
3SK239A Key Features
- Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz)
- Capable of low voltage operation
- Part: 3SK239A
- Manufacturer: Hitachi Semiconductor
- Size: 41.66 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 3SK233 | Silicon N-Channel Dual Gate MOS FET |
| 3SK228 | Silicon NPN Triple Diffused |
| 3SK290 | Silicon N-Channel Dual Gate MOS FET |
| 3SK295 | Silicon N-Channel Dual Gate MOS FET |
| 3SK296 | Silicon N-Channel Dual-Gate MOSFET |