3SK296 Overview
3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier.
3SK296 Key Features
- Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz
- Capable of low voltage operation
| Part number | 3SK296 |
|---|---|
| Datasheet | 3SK296_HitachiSemiconductor.pdf |
| File Size | 50.65 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel Dual-Gate MOSFET |
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3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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3SK296 | N-Channel Dual-Gate MOSFET | Renesas |
See all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
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