3SK296 Datasheet Silicon N-channel Dual-gate MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF.

Datasheet Details

Part number	3SK296
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	50.65 KB
Description	Silicon N-Channel Dual-Gate MOSFET
Datasheet	3SK296_HitachiSemiconductor.pdf

Key Features

Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz.
Capable of low voltage operation Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150.
55 to +150 Unit V V V mA mW °C °C Attention: Th.

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Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	3SK296	N-Channel Dual-Gate MOSFET	Renesas

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