3SK296 Description
3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier.
3SK296 Key Features
- Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz
- Capable of low voltage operation
- Part: 3SK296
- Manufacturer: Hitachi Semiconductor
- Size: 50.65 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
3SK296 | N-Channel Dual-Gate MOSFET |