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3SK296 - Silicon N-Channel Dual-Gate MOSFET

Key Features

  • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz.
  • Capable of low voltage operation Outline CMPAK.
  • 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150.
  • 55 to +150 Unit V V V mA mW °C °C Attention: Th.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
3SK290 Silicon N-Channel Dual Gate MOS FET
3SK295 Silicon N-Channel Dual Gate MOS FET
3SK297 Silicon N-Channel Dual Gate MOS FET
3SK298 Silicon N-Channel Dual Gate MOS FET
3SK228 Silicon NPN Triple Diffused

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.