3SK296 Overview
3SK296 Silicon N-Channel Dual Gate MOS FET Application UHF RF amplifier.
3SK296 Key Features
- Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz
- Capable of low voltage operation
Datasheet Details
| Part number | 3SK296 |
|---|---|
| Datasheet | 3SK296-Renesas.pdf |
| File Size | 270.68 KB |
| Manufacturer | Renesas |
| Description | N-Channel Dual-Gate MOSFET |
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