3SK296 Description
3SK296 Silicon N-Channel Dual Gate MOS FET Application UHF RF amplifier.
3SK296 Key Features
- Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz
- Capable of low voltage operation
- Part: 3SK296
- Manufacturer: Renesas
- Size: 270.68 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
3SK296 | Silicon N-Channel Dual-Gate MOSFET |