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3SK321 - Silicon N-Channel Dual Gate MOS FET

Key Features

  • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz.
  • Capable of low voltage operation.
  • Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
3SK322 Silicon N-Channel Dual Gate MOS FET
3SK300 Silicon N-Channel Transistor
3SK309 UHF RF Amplifier
3SK317 UHF / VHF RF Amplifier
3SK318 UHF RF Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.