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3SK321 - Silicon N-Channel Dual Gate MOS FET

Datasheet Summary

Features

  • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz.
  • Capable of low voltage operation.
  • Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150.

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Datasheet Details

Part number 3SK321
Manufacturer Hitachi Semiconductor
File Size 59.20 KB
Description Silicon N-Channel Dual Gate MOS FET
Datasheet download datasheet 3SK321 Datasheet
Additional preview pages of the 3SK321 datasheet.

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Full PDF Text Transcription

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3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.
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