3SK321 Description
3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd. 1998 Application UHF RF amplifier.
3SK321 Key Features
- Low noise figure. NF = 2.0 dB typ. at f = 900 MHz
- Capable of low voltage operation
- Provide mini mold packages; MPAK-4R(SOT-143 var.)