3SK321 Overview
Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline
3SK321 Key Features
- Low noise figure. NF = 2.0 dB typ. at f = 900 MHz
- Capable of low voltage operation
- Provide mini mold packages; MPAK-4R(SOT-143 var.)