3SK322
Features
- Low noise figure. NF = 1.0 d B typ. at f = 200 MHz
- Capable of low voltage operation
- Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150
- 55 to +150 Unit V V V m A m W °C °C
Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 12 ±8 ±8
- - 0.5 0 0 16 2.4 0.8
- 22
- 12
- - Typ
- -
- -
- -
- - 20 2.9 1.0 0.023 25 1.0 15 3.2 2.8 Max
- -
- ±100 ±100 10 +1.0 +1.0
- 3.4 1.4 0.04
- 1.8
- 4.5 3.5 Unit V V V n A n A m A V V m S p F p F p F d B d B d B d B d B VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 60 MHz VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 900 MHz VDS = 6 V, VG2S...
