Low noise figure. NF = 1.0 dB typ. at f = 200 MHz.
Capable of low voltage operation.
Provide mini mold packages; MPAK-4R(SOT-143 var. )
Outline
3SK322
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150.
55 to +150 Unit V V V mA mW °C °C
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3SK322
Silicon N-Channel Dual Gate MOS FET
ADE-208-712A (Z) 2nd. Edition Dec. 1998 Application
UHF / VHF RF amplifier
Features
• Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
3SK322
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C
Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.
3SK322 Datasheet
