HA22012 Datasheet | Hitachi Semiconductor

Features - - - - - - Suitable for low noise amplifier of PHS (1.9 GHz) Low voltage and low current operation (3V, 3m A typ.) Low noise (1.9 d B typ.) High power gain (13.5 d B typ.) Built- in input and output matching circuits (50Ω) Small surface mount package (MPAK- 5) Outline MPAK- 5 Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Symbol Vdd Idd Pd Tch Tstg Topr Ratings 5 6 100 150 - 55 to +150 - 20 to +70 .. Unit V m A m W °C °C °C Electrical Characteristics (Ta = 25°C, Vdd = 3V) Item Quiescent current Power gain Noise figure Symbol Idd PG NF Min 1.5 11.5 - Typ 3 13.5 1.9 Max 5.5 16 2.5 Unit m A d B d B Test Conditions No signal f = 1.9 GHz f = 1.9 GHz Pin Typical Performance (Ta = 25°C, Vdd = 3V) Item VSWR (input) VSWR (output) 3rd order intermodulation distortion Symbol VSWR in VSWR out IM3 Typ 1.6 1.6 58 Unit - - d B Test Conditions f = 1.9 GHz f = 1.9 GHz f = 1.9 GHz, UD = 1.9006 Ghz Pin = - 30 d Bm Pin 4 1 .. Block Diagram in 4 3 2 Vdd 5 1 Cs 100p F GND out 100p F .. Pin Arrangement Monthly code (variable) Mark type Pin name RF out GND Cs RF in Vdd Function RF output Ground RF input Power supply Top View Pin No. 1 2 3 4 5 Bypath capacitor (>100 p F) .. Pattern Layout scale 4/1 :φ0.5mm :φ0.3mm Front Side view of PCB Pattern scale 4/1 : Capacitor (100p F) cs GBF RF in Vdd RF out ER=4.8...