HA22033 Datasheet | Hitachi Semiconductor

Features - - - - - - Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7m A typ.) Low noise (1.4 d B typ. @1.5GHz) High power gain (14 d B typ. @1.5GHz) Built- in matching circuits (50Ω) Small surface mount package (MPAK- 5) Outline MPAK- 5 This document may, wholly or partially, be subject to change without notice. This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues Ga As. Since dust or fume of Ga As is highly poisonous to human body, please do not Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Maximum input power Symbol Vdd Idd Pd Tch Tstg Topr Pin max Ratings 5 6 100 150 - 55 to +125 - 20 to +70 +15 Unit V m A m W °C °C °C d Bm Electrical Characteristics (Ta = 25°C, Vdd = 2.7V) Item Quiescent current Power gain Noise figure Symbol Idd PG NF Min - 12 - Typ 1.7 14 1.4 Max 2.5 - 2 Unit m A d B d B Test Conditions No signal f = 1.5 GHz f = 1.5 GHz Pin Typical Performance (Ta = 25°C, Vdd = 2.7V) Item VSWR (input) VSWR (output) 3rd order intermodulation distortion Symbol VSWR in VSWR out IM3 Typ 1.5 2.2 50 Unit - - d B Test Conditions f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz, Pin = - 30 d Bm Pin 4 1 Block Diagram in 1.5p F 4 5.6n H 2 3 Cs 100p F GND Vdd 5 1 out 100p F Pin Arrangement Monthly code (variable) Mark type Pin name RF out GND Cs RF in Vdd Function RF output Ground RF input Power supply Top View Pin No. 1 2 3 4 5 Bypath capacitor (>100 p F) Pattern Layout scale 4/1 : φ0.5mm : φ0.3mm Front Side view of PCB Pattern scale 4/1 100p F 5.6n H 1.5p F Vdd GEA RF in cs : Capacitor : Inductor RF out 100p F ER=4.8...