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HAT1031T - Silicon P-Channel Power MOSFET

Key Features

  • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP.
  • 8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate MOS1 MOS2 HAT1031T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 20 ±10.
  • 2.5.
  • 20.
  • 2.5 Unit V V A A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT1031T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-528D (Z) 5th. Edition December 1998 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate MOS1 MOS2 HAT1031T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –20 ±10 –2.5 –20 –2.5 Unit V V A A A W W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 1 1.5 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.