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HAT1033T
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-532H (Z) 9th. Edition February 1999 Features
• • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
TSSOP–8
65 34
87
12 1 5 8 D D D
4 G
S S S S 2 3 6 7
1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate
HAT1033T
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings – 20 ± 10 – 3.5 – 28 – 3.5
Unit V V A A A W °C °C
Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg
Note2
1.3 150 – 55 to + 150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.
HAT1033T Datasheet
