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HAT2024R - Silicon N-Channel Power MOSFET

Key Features

  • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP.
  • 8 8 5 7 6 34 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S 3 1, 3 2, 4 5, 6, 7, 8 S G Dra MOS1 MOS2 HAT2024R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symb.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-494 C (Z) 4th. Edition July 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 34 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S 3 1, 3 2, 4 5, 6, 7, 8 S G Dra MOS1 MOS2 HAT2024R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch*2 Pch * Tch Tstg 3 1 Ratings 30 ±20 5.5 44 5.5 2 3 150 –55 to +150 Unit V V A A A W W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.