Datasheet4U Logo Datasheet4U.com

HAT2025R - Silicon N-Channel Power MOSFET

Key Features

  • High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP.
  • 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2025R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HAT2025R Silicon N-Channel Power MOSFET Renesas
HAT2020R Silicon N-Channel Power MOSFET Renesas
HAT2022R Silicon N-Channel Power MOSFET Renesas
HAT2024R Silicon N-Channel Power MOSFET Renesas
HAT2024R Dual N-Channel 30-V MOSFET VBsemi

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HAT2020R Silicon N-Channel Power MOSFET
HAT2022R Silicon N-Channel Power MOSFET
HAT2024R Silicon N-Channel Power MOSFET
HAT2026R Silicon N-Channel Power MOSFET
HAT2027R Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-518C (Z) 4th. Edition February 1999 Features • • • • • High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2025R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 20 8 64 8 2.5 150 – 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.