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HAT2025R Datasheet Silicon N-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-518C (Z) 4th.

Key Features

  • High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP.
  • 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2025R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature.

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