Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP.
8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT2029R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperat.
Full PDF Text Transcription for HAT2029R (Reference)
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HAT2029R. For precise diagrams, and layout, please refer to the original PDF.
HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-525D (Z) 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate d...
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bruary 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2029R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 28 ± 12 7.5 60 7.5 2 3 150 – 55 to + 150 Unit V V A A A W W °C °C 1. PW
HAT2029R Datasheet
