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HB56A132 - High Density Dynamic RAM Module

Description

The HB56A132 is a 1 M × 32 dynamic RAM module, mounted 8 pieces of (4-Mbit) DRAM (HM514400CS/CLS) sealed in SOJ package.

An outline of the HB56A132 is 72-pin single in-line package.

Therefore, the HB56A132 makes high density mounting possible without surface mount technology.

Features

  • 72-pin single in-line package.
  • Lead pitch: 1.27 mm.
  • Single 5 V (± 5%) supply.
  • High speed.
  • Access time: 60 ns/70 ns/80 ns (max).
  • Low power dissipation.
  • Active mode: 4.62W/4.20W/3.78W (max).
  • Standby mode: 84 mW (max) 4.2 mW (max) (L-version).
  • Fast page mode capability.
  • 1,024 refresh cycle: 16 ms 128 ms (L-version).
  • 2 variations of refresh.
  • RAS only refresh.
  • CAS before RAS refresh.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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HB56A132BU High Density Dynamic RAM Module
HB56A132BW High Density Dynamic RAM Module
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HB56A132 Series 1,048,576-word × 32-Bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A132 is a 1 M × 32 dynamic RAM module, mounted 8 pieces of (4-Mbit) DRAM (HM514400CS/CLS) sealed in SOJ package. An outline of the HB56A132 is 72-pin single in-line package. Therefore, the HB56A132 makes high density mounting possible without surface mount technology. The HB56A132 provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ. Features • 72-pin single in-line package — Lead pitch: 1.27 mm • Single 5 V (± 5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 4.62W/4.20W/3.78W (max) — Standby mode: 84 mW (max) 4.
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