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HB56A132SBW Datasheet High Density Dynamic RAM Module

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HB56A132 Series 1,048,576-word × 32-Bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec.

Download the HB56A132SBW datasheet PDF. This datasheet also includes the HB56A132 variant, as both parts are published together in a single manufacturer document.

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General Description

The HB56A132 is a 1 M × 32 dynamic RAM module, mounted 8 pieces of (4-Mbit) DRAM (HM514400CS/CLS) sealed in SOJ package.

An outline of the HB56A132 is 72-pin single in-line package.

Therefore, the HB56A132 makes high density mounting possible without surface mount technology.

Key Features

  • 72-pin single in-line package.
  • Lead pitch: 1.27 mm.
  • Single 5 V (± 5%) supply.
  • High speed.
  • Access time: 60 ns/70 ns/80 ns (max).
  • Low power dissipation.
  • Active mode: 4.62W/4.20W/3.78W (max).
  • Standby mode: 84 mW (max) 4.2 mW (max) (L-version).
  • Fast page mode capability.
  • 1,024 refresh cycle: 16 ms 128 ms (L-version).
  • 2 variations of refresh.
  • RAS only refresh.
  • CAS before RAS refresh.

More Datasheets from Hitachi Semiconductor (now Renesas)

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