HL6312G datasheet by Hitachi Semiconductor (now Renesas).
| Part number | HL6312G |
|---|---|
| Datasheet | HL6312G_HitachiSemiconductor.pdf |
| File Size | 61.12 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | (HL6312G / HL6313G) AlGaInP Laser Diodes |
|
|
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| HL6313G | (HL6312G / HL6313G) AlGaInP Laser Diodes |
| HL6314MG | AlGaInP Laser Diode |
| HL6339G | (HL6339G / HL6342G) 633nm Lasing Laser Diode |
| HL6342G | (HL6339G / HL6342G) 633nm Lasing Laser Diode |
| HL6724MG | band AlGaInP laser diode |
