Datasheet Details
| Part number | HL6312G |
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| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 61.12 KB |
| Description | (HL6312G / HL6313G) AlGaInP Laser Diodes |
| Datasheet |
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The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.
Wavelength is equal to He-Ne Gas laser.
They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
| Part number | HL6312G |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 61.12 KB |
| Description | (HL6312G / HL6313G) AlGaInP Laser Diodes |
| Datasheet |
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| Part Number | Description | Manufacturer |
|---|---|---|
| HL63101MG | AlGaInP Laser Diode | USHIO |
| HL63102MG | AlGaInP Laser Diode | USHIO |
| HL6323MG | AlGaInP Laser Diode | Hitachi |
| HL63290HD | AlGaInP Laser Diode | USHIO |
| HL6331G | (HL6332G) Low Operating Current Visible Laser Diode | Hitachi |
| Part Number | Description |
|---|---|
| HL6313G | (HL6312G / HL6313G) AlGaInP Laser Diodes |
| HL6314MG | AlGaInP Laser Diode |
| HL6339G | (HL6339G / HL6342G) 633nm Lasing Laser Diode |
| HL6342G | (HL6339G / HL6342G) 633nm Lasing Laser Diode |
| HL6724MG | band AlGaInP laser diode |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.