HL6313G - (HL6312G / HL6313G) AlGaInP Laser Diodes

This page provides the datasheet information for the HL6313G, a member of the HL6312G (HL6312G / HL6313G) AlGaInP Laser Diodes family.

Product Overview

Hitachi Semiconductor

Part number	HL6313G
Manufacturer	Hitachi Semiconductor
File Size	61.12 KB
Description	(HL6312G / HL6313G) AlGaInP Laser Diodes
Datasheet	HL6313G Datasheet
Additional preview pages of the HL6313G datasheet.

The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.

Wavelength is equal to He-Ne Gas laser.

They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

Visible light output: λp = 635 nm Typ (nearly equal to He-Ne Gas Laser) Optical output power: 5 mW CW Low Operating voltage: 2.7 V Max Single longitudinal mode Built-in photodiode for monitoring laser output 99 www. DataSheet4U. com HL6312/13G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD).

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Published: Nov 6, 2006 |