HRU0203A - Silicon Schottky Barrier Diode for Rectifying
Hitachi Semiconductor (now Renesas)
Key Features
Low forward voltage drop and suitable for high effifiency rectifying.
Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. Ordering Information
Type No. HRU0203A Laser Mark Y Package Code URP
Outline
Cathode mark Mark 1
Y
2 1. Cathode 2. Anode
HRU0203A
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage.
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HRU0203A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-469B (Z) Rev 2 Oct. 1997 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRU0203A Laser Mark Y Package Code URP
Outline
Cathode mark Mark 1
Y
2 1. Cathode 2. Anode
HRU0203A
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Note Symbol V
*1 RRM
Value 30 200
Unit V mA A °C °C
I o*1
IFSM
Tj
*2
2 125 -55Å`+125
Tstg
1. See from Fig.3 to Fig.5 2.
HRU0203A Datasheet
