HRU0302A - Silicon Schottky Barrier Diode for Rectifying
Hitachi Semiconductor (now Renesas)
Key Features
Low forward voltage drop and suitable for high effifiency rectifying.
Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information
Type No. HRU0302A Laser Mark Z Package Code URP
Outline
Cathode mark Mark 1
Z
2 1. Cathode 2. Anode
HRU0302A
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage t.
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HRU0302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-235G(Z) Rev 7 Jul. 1998 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HRU0302A Laser Mark Z Package Code URP
Outline
Cathode mark Mark 1
Z
2 1. Cathode 2. Anode
HRU0302A
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V
*1 RRM
Value 20 300
Unit V mA A °C °C
I O*1 I FSM Tj Tstg
*2
3 125 –55 to +125
Notes 1. See from Fig.4 to Fig.6 Notes 2.
HRU0302A Datasheet
