HRW0302A - Silicon Schottky Barrier Diode for Rectifying
Hitachi Semiconductor (now Renesas)
Key Features
Low forward voltage drop and suitable for high effifiency rectifying.
MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information
Type No. HRW0302A Laser Mark S11 Package Code MPAK
Outline
3
2
1
(Top View)
1 NC 2 Anode 3 Cathode
HRW0302A
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol.
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HRW0302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-015G(Z) Rev 7 Jul. 1998 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRW0302A Laser Mark S11 Package Code MPAK
Outline
3
2
1
(Top View)
1 NC 2 Anode 3 Cathode
HRW0302A
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V
*1 RRM
Value 20 300
Unit V mA A °C °C
I O*1 I FSM Tj Tstg
*2
3 125 –55 to +125
Notes 1. See from Fig.4 to Fig.6 Notes 2.
HRW0302A Datasheet
