1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
A bsolute M axim um R atings T a = 25
P aram eter R epetitive peak reverse voltage A verage rectified current N on-repetitive peak forw ard surge current Junction tem perature S torage tem perature N ote 1. 10m sec sine w ave 1 pulse S ym bol V RRM IO I F S M (N ote 1) Tj T stg V alue 20 300 3 125 -55 to + 125 U nit V mA A
Electrical Characteristics Ta = 25
Param eter Forward voltage Rev.
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SMD Type
Silicon Schottky Barrier Diode HRW0302A
Diodes
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Low forward voltage drop and suitable for high effifiency rectifying. MPAK package is suittable for high density surface mounting and high speed assembly.
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
A bsolute M axim um R atings T a = 25
P aram eter R epetitive peak reverse voltage A verage rectified current N on-repetitive peak forw ard surge current Junction tem perature S torage tem perature N ote 1.
HRW0302A Datasheet