HSB83 Datasheet Silicon Epitaxial Planar Diode For High Voltage Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HSB83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-489A(Z) Rev 1 Nov.

Datasheet Details

Part number	HSB83
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	23.17 KB
Description	Silicon Epitaxial Planar Diode for High Voltage Switching
Datasheet	HSB83_HitachiSemiconductor.pdf

High reverse voltage. (VR=250V).
CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB83 Laser Mark F7 Package Code CMPAK Outline 3 2 1 1 NC 2 Anode 3 Cathode (Top View) HSB83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM.

Part Number	Description
HSB83YP	Silicon Epitaxial Planar Diode for High Voltage Switching
HSB0104YP	Silicon Schottky Barrier Diode for High Speed Switching
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HSB124S	Silicon Epitaxial Planar Diode for High Speed Switching
HSB226YP	Silicon Schottky Barrier Diode
HSB276AS	Silicon Schottky Barrier Diode for Balanced Mixer
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HSB278S	Silicon Schottky Barrier Diode for High Speed Switching