HSD276A
HSD276A is Silicon Schottky Barrier Diode for Detector manufactured by Hitachi Semiconductor.
Features
- High forward current, Low capacitance.
- Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HSD276A Laser Mark S2 Package Code SFP
Outline
Cathode mark Mark 1
S2
2 1. Cathode 2. Anode
Data Sheet 4 U .
..
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value 5 3 30 125
- 55 to +125 Unit V V m A °C °C
Repetitive peak reverse voltage VRRM Reverse voltage Average rectified current Junction temperature Storage temperature VR IO Tj Tstg
Electrical Characteristics
(Ta = 25°C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability
- 1
Symbol VR IR IF C
Min 3 35 30
Typ
Max 50 0.85
Unit V µA m A p F V
Test Condition IR = 1 m A VR = 0.5V VF = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 p F, R = 0 Ω , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.0, Jul. 2001, page 2 of 5
Data Sheet 4 U .
..
Main Characteristic
10-1 10-2
(A)
Forward current IF
Reverse current IR
(A)
Ta = 75°C
10-2
10-3
10-3...
