• Part: HSD278
  • Description: Silicon Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 171.40 KB
Download HSD278 Datasheet PDF
Hitachi Semiconductor
HSD278
HSD278 is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features - Low forward voltage, Low capacitance. - Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HSD278 Laser Mark S1 Package Code SFP Outline Cathode mark Mark 1 S1 2 1. Cathode 2. Anode Data Sheet 4 U . .. Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Non-Repetitive peak forward surge current Peak forward current Average rectified current Junction temperature Storage temperature Note: 10 msec sine wave 1 pulse Symbol VRRM VR Value 30 30 200 150 30 125 - 55 to +125 Unit V V m A m A m A °C °C IFSM - IFM IO Tj Tstg Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance ESD-Capability - 1 Min - - - - 100 Typ - - - - - Max 0.30 0.95 700 1.50 - Unit V Test Condition I F = 1 m A I F = 30 m A IR C - n A p F V VR = 10 V VR = 1 V, f = 1 MHz C = 200 p F, RL = 0 Ω, Both forward and reverse direction 1 pulse. Notes : 1. Failure criterion ; IR ≥ 1.4 µA at V R = 10 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package. 2 4 U . Data Sheet .. Main Characteristic 101 100 10- 1 10 10 10 - 2 - 3 -...