HSD278
HSD278 is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Low forward voltage, Low capacitance.
- Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HSD278 Laser Mark S1 Package Code SFP
Outline
Cathode mark Mark 1
S1
2 1. Cathode 2. Anode
Data Sheet 4 U .
..
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Non-Repetitive peak forward surge current Peak forward current Average rectified current Junction temperature Storage temperature Note: 10 msec sine wave 1 pulse Symbol VRRM VR Value 30 30 200 150 30 125
- 55 to +125 Unit V V m A m A m A °C °C
IFSM
- IFM
IO Tj Tstg
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance ESD-Capability
- 1
Min
- -
- - 100
Typ
- -
- -
- Max 0.30 0.95 700 1.50
- Unit V
Test Condition I F = 1 m A I F = 30 m A
IR C
- n A p F V
VR = 10 V VR = 1 V, f = 1 MHz C = 200 p F, RL = 0 Ω, Both forward and reverse direction 1 pulse.
Notes : 1. Failure criterion ; IR ≥ 1.4 µA at V R = 10 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.
2 4 U . Data Sheet
..
Main Characteristic
101 100 10- 1 10 10 10
- 2
- 3
-...