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HVC131 - Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Key Features

  • Low capacitance. (C=0.8pF max).
  • Low forward resistance. (rf=1.0 Ω max).
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC131 Laser Mark P1 Package Code UFP Outline Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HVC131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-422B(Z) Rev 2 Feb. 2000 Features • Low capacitance.(C=0.8pF max) • Low forward resistance. (rf=1.0 Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC131 Laser Mark P1 Package Code UFP Outline Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 0.1 1.0 0.8 1.