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HVC133 - Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Key Features

  • Low capacitance. (C1=1.0pF max).
  • Low forward resistance. (rf=0.7 Ω max).
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC133 Laser Mark P3 Package Code UFP Outline Cathode mark Mark 1 P3 2 1. Cathode 2. Anode HVC133 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V mW °C °C Electrical Ch.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423B(Z) Rev. 2 Feb 2000 Features • Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7 Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC133 Laser Mark P3 Package Code UFP Outline Cathode mark Mark 1 P3 2 1. Cathode 2. Anode HVC133 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 — — — — — Typ — — — — — 0.55 Max — 100 0.85 1.0 0.9 0.