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HVC135 - Silicon Epitaxial Trench Pin Diode for Antenna Switching

Key Features

  • Adopting the trench structure improves low capacitance. (C=0.6pF max) Low forward resistance. (rf=2.0 Ω max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency. Ordering Information Type No. HVC135 Laser Mark P5 Package Code UFP Outline Cathode mark Mark 1 P5 2 1. Cathode 2. Anode HVC135 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HVC131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching
HVC132 Silicon Epitaxial Planar Pin Diode for High Frequency Switching
HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching
HVC134 Silicon Epitaxial Planar Pin Diode for High Frequency Switching
HVC136 Silicon Epitaxial Trench Pin Diode for Antenna Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HVC135 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-818A (Z) Rev 1 Feb. 2000 Features • • • • Adopting the trench structure improves low capacitance.(C=0.6pF max) Low forward resistance. (rf=2.0 Ω max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency. Ordering Information Type No. HVC135 Laser Mark P5 Package Code UFP Outline Cathode mark Mark 1 P5 2 1. Cathode 2.