HVC135
Features
Adopting the trench structure improves low capacitance.(C=0.6p F max) Low forward resistance. (rf=2.0 max) Low operation current.
+0.05 0.8 -0.05
SOD-523
1.2+0.1 -0.1
+
+0.05 0.3 -0.05
Unit: mm 0.6+0.1
-0.1
- 1.6+0.1 -0.1
0.77max
+0.05 0.1 -0.02
0.07max
A bsolute M axim um R atings T a = 25
Param eter P eak reverse voltage R everse voltage Forward current P ower dissipation Junction tem perature Storage tem perature
Sym bol VRM VR IF Pd Tj T stg
V alue 65 60 100 150 125
-55 to +125
U nit V V m A m W
Electrical Characteristics Ta = 25
P aram eter Reverse current Reverse voltage Capacitance Forward resistance
ESD-Capability
- 1
Symbol IR VF C rf
Conditions VR = 60 V IF = 2 m A VR = 1 V, f = 1 MHz IF = 2 m A, f = 100 MHz
C =200p F, Both forward and reverse direction 1 pulse
Note 1. Failure criterion ; IR > 100 n A at VR = 60V.
Min
Typ
Max
Unit
0.6 p F
Marking
Marking
P5
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