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HVC136 - Silicon Epitaxial Trench Pin Diode for Antenna Switching

Datasheet Summary

Features

  • Adopting the trench structure improves low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 2.5 Ω max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency. Ordering Information Type No. HVC136 Laser Mark P6 Package Code UFP Outline Cathode mark Mark 1 P6 2 1. Cathode 2. Anode HVC136 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse v.

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Datasheet Details

Part number HVC136
Manufacturer Hitachi Semiconductor
File Size 25.64 KB
Description Silicon Epitaxial Trench Pin Diode for Antenna Switching
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HVC136 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-799B (Z) Rev 2 Feb. 2000 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.45 pF max) Low forward resistance. (rf = 2.5 Ω max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency. Ordering Information Type No. HVC136 Laser Mark P6 Package Code UFP Outline Cathode mark Mark 1 P6 2 1. Cathode 2.
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