HVU131 - Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Features
Low capacitance. (C=0.8pF max).
Low forward resistance. (rf=1.0 Ω max).
Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information
Type No. HVU131 Laser Mark P1 Package Code URP
Outline
Cathode mark Mark 1
P1
2 1. Cathode 2. Anode
HVU131
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 1.
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HVU131
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-239E(Z) Rev 5 Feb. 2000 Features
• Low capacitance.(C=0.8pF max) • Low forward resistance. (rf=1.0 Ω max) • Ultra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. HVU131 Laser Mark P1 Package Code URP
Outline
Cathode mark Mark 1
P1
2 1. Cathode 2. Anode
HVU131
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 0.1 1.0 0.