HVU133 - Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Features
Low capacitance. (C1=1.0pF max).
Low forward resistance. (rf=0.7 Ω max).
Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information
Type No. HVU133 Laser Mark P3 Package Code URP
Outline
Cathode mark Mark 1
P3
2 1. Cathode 2. Anode
HVU133
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +1.
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HVU133
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-377B(Z) Rev 2 Feb. 2000 Features
• Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7 Ω max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HVU133 Laser Mark P3 Package Code URP
Outline
Cathode mark Mark 1
P3
2 1. Cathode 2. Anode
HVU133
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 — — — — — Typ — — — — — 0.
HVU133 Datasheet
