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K1154 - 2SK1154

Download the K1154 datasheet PDF. This datasheet also covers the K1153 variant, as both devices belong to the same 2sk1154 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator and DC-DC converter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1153, 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Stor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K1153-HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K1150BA (K1100BA Series) 5V Crystal Clock Oscillators M-Tron
K1150BA clock oscillator MTRONPTI
K1152 2SK1152 Renesas
K1155 Silicon N-Channel MOSFET Renesas
K1156 Silicon N-Channel MOSFET Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1153 2SK1153
K1158 2SK1158
K1162 Silicon N-Channel MOS FET
K1164 2SK1164
K1170 2SK1170

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1153, 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1153, 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.