K1156 - Silicon N-Channel MOSFET

Renesas

Download the K1156 datasheet PDF. This datasheet also covers the K1155 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low on-resistance.
High speed switching.
Low drive current.
No secondary breakdown.
Suitable for switching regulator and DC-DC converter Outline.

📥 Download Datasheet

K1156 silicon n-channel mosfet by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (K1155-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	K1156
Manufacturer	Renesas
File Size	89.03 KB
Description	Silicon N-Channel MOSFET
Datasheet	K1156 Datasheet

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Other Datasheets by Renesas

Part Number	Description
K1152	2SK1152
K1155	Silicon N-Channel MOSFET
K1157	Silicon N-Channel MOSFET
K1158	Silicon N-Channel MOSFET
K1160	2SK1160

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK1155, 2SK1156 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 Free Datasheet http://www.Datasheet4U.com 2SK1155, 2SK1156 Absolute Maximum Ratings Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.