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K1315 - 2SK1316

Download the K1315 datasheet PDF. This datasheet also covers the K1316 variant, as both devices belong to the same 2sk1316 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K1316-HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K1310A N-Channel MOSFET Toshiba Semiconductor
K1317 Silicon N-Channel MOSFET Renesas
K1300 5V Crystal Clock Oscillators Champion
K1300G Sidac JIEJIE
K1300G Axial Leaded Silicon Bilateral Voltage Triggered Diode Sunmate

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1316 2SK1316
K1317 2SK1317
K1306 2SK1306
K1307 2SK1307
K1328 2SK1328

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.