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K1316 - 2SK1316

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1315 2SK1316
K1317 2SK1317
K1306 2SK1306
K1307 2SK1307
K1328 2SK1328

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.