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K1401A - 2SK1401A

Key Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S http://www. Datasheet4U. com 2SK1401, 2SK1401A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Cha.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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K1403 2SK1403
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S http://www.Datasheet4U.com 2SK1401, 2SK1401A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.