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K2926 - 2SK2926

Key Features

  • Low on-resistance RDS(on) = 0.042Ω typ.
  • 4V gate drive devices.
  • High speed switching Outline DPAK.
  • 2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temper.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2929 2SK2929
K2930 2SK2930
K2936 2SK2936
K2938 2SK2938
K2958 2SK2958

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3.