Datasheet Summary
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS(on) = 0.042Ω typ.
- 4V gate drive devices.
- High speed switching
Outline
DPAK- 2
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
ADE-208-535 1st. Edition
2SK2926(L),...