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K2958 - 2SK2958

Key Features

  • Low on-resistance RDS(on) = 5.5mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline LDPAK D G S ADE-208-568B (Z) 3rd. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel tem.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2958(L),2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-568B (Z) 3rd. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.