Datasheet Summary
2SK3142
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS(on) = 4 mΩ typ.
- Low drive current
- 4 V gate drive device can be driven from 5 V source
Outline
TO- 220CFM
ADE-208-681A (Z) 2nd. Edition
February 1999
1. Gate
2. Drain
3....