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K3142 Datasheet 2sk3142

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3142 Silicon N Channel MOS FET High Speed Power Switching.

Key Features

  • Low on-resistance RDS(on) = 4 mΩ typ.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 220CFM ADE-208-681A (Z) 2nd. Edition February 1999 D G 123 1. Gate 2. Drain 3. Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS I.

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