4 V gate drive device can be driven from 5 V source
Outline
TO.
220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3148
www. DataSheet4U. com
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note:.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
2SK3148
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-748A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3148
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 100 ±20 20 60 20 20 40 30 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1.
K3148 Datasheet
