PF0414A
PF0414A is MOS FET Power Amplifier Module for DCS 1800 Handy Phone manufactured by Hitachi Semiconductor.
Features
- -
- - 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.9 µsec
Pin Arrangement
- RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 11 3 6 20
- 30 to +100
- 30 to +100 3 Unit V A V m W °C °C W
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 1710 0.5
- 37
- -
- 2.0 Typ
- -
- 45
- 45
- 45 1.5 2.4 Max 1785 3 100
- - 35
- 35 3
- Unit MHz V µA % d Bc d Bc
- W Pin = 2 m W, VDD = 4.8 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 4.3 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 2 m W, VDD = 4.8 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 4.8 V, Pout = 1.8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 6 V, Ids ≤ 0.9 A (only pulsed), Pout ≤ 1.8 W (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases VDD = 11 V, VAPC = 0 V Pin = 2 m W, VDD = 4.8 V, Pout = 1.8 W (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C Test Condition
Output power (2)
Pout (2)
- W
Isolation
- -
- 40
- 30 d Bm
Switching time tr, tf
- 0.9
µs
Stability
- No parasitic oscillation
-...