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PF0414A - MOS FET Power Amplifier Module for DCS 1800 Handy Phone

Key Features

  • 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.9 µsec Pin Arrangement.
  • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 11 3 6 20.
  • 30 to +100.
  • 30 to +100 3 Unit V A V mW °C.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-431B (Z) 3rd Edition December 1997 Application For DCS 1800 class1 1710 to 1785 MHz. Features • • • • 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.