• Part: PF0414B
  • Description: MOS FET Power Amplifier Module for DCS 1800 Handy Phone
  • Manufacturer: Hitachi Semiconductor
  • Size: 26.08 KB
Download PF0414B Datasheet PDF
Hitachi Semiconductor
PF0414B
PF0414B is MOS FET Power Amplifier Module for DCS 1800 Handy Phone manufactured by Hitachi Semiconductor.
Features - - - - - 3stage amplifier : 0 d Bm input Lead less thin & small package : 2 mm Max & 0.2cc High efficiency : 40% Typ at 32.5 d Bm Wide gain control range : 70 d B Typ Low voltage operation : 3.5 V Pin Arrangement - RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 2 4 10 - 30 to +100 - 30 to +100 3 Unit V A V m W °C °C W Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 1710 0.5 - 35 - - - 32.5 Typ - - - 40 - 45 - 45 1.5 33.0 Max 1785 2.2 100 - - 35 - 35 3 - Unit MHz V µA % d Bc d Bc - d Bm Pin = 0 d Bm, VDD = 3.5 V, VAPC = 2.2 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 0 d Bm, VDD = 3.0 V, VAPC = 2.2 V, RL = Rg = 50 Ω, Tc = 85°C Pin = 0 d Bm, VDD = 3.5 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 0 d Bm, VDD = 3.5 V, Pout = 32.5 d Bm, RL = Rg = 50 Ω, Tc = 25°C Pin = 0 d Bm, VDD = 3 to 5.1 V, Pout ≤ 32.5 d Bm (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 8 V, VAPC = 0 V Pin = 0 d Bm, VDD = 3.5 V, Pout = 32.5 d Bm (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C Test Condition Output power (2) Pout (2) - d Bm Isolation - - - 36 - 33 d Bm Switching time tr, tf - 1 µs Stability - No parasitic...