Hitachi 1SS118
Silicon Epitaxial Planar Diode
| Part No. | 1SS118 |
|---|---|
| Datasheet | 1SS118 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Diode |
| Buy | Stock & Price |
FEATURES
● High average forward current. (I O = 200mA)● High reliability with glass seal. Ordering Information Type No. 1SS118 Cathode band Black Mark S118 Package Code DO-35 Outline 1 S1 18 2 Type No. Cathode band 1. Cathode 2. Anode 1SS118
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Value at duration of 1µs Symbol VRM VR I FM I FSM * IO Pd Tj Tstg Value 75 50 600 4 200 500 175 –65 to +175 Unit V V mA A mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr Min — — — — Typ — — — — Max 1.0 0.1 3.5 3.0 Unit V µA pF ns Test Condition I F = 10mA VR = 50V VR = 0V, f = 1MHz I F = 10mA, VR = 6V, Irr = 0.1IR , RL = 50Ω 1SS118 10 –1 Forward current I F (A) 10 –2 10 –3 10 –4 0 0.2 Ta = 125 °C Ta = 75°C Ta = 25°C Ta = –25 ° C 0.8 0.4 0.6 1.0 Forward voltage VF (V) 1.2 Fig.1 Forward current Vs.
