Hitachi 1SS88
Silicon Schottky Barrier Diode
| Part No. | 1SS88 |
|---|---|
| Datasheet | 1SS88 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C = 0.97 pF max)● High reliability with glass seal. Ordering Information Type No. 1SS88 Cathode band White Mark H Package Code DO-35 Outline H 1 Cathode band 2 1. Cathode 2. Anode 1SS88
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Peak forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VR IFM IO Pd Tj Tstg Value 10 35 15 150 100 −55 to +100 Unit V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current IR1 IR2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability * 1 Min 365 520 30 Typ Max 430 600 0.2 10 0.97 0.1 10 10 Unit mV µA pF pF mV Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 2.5 mA IF = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. C ∆C ∆VF1 ∆VF2 V Notes: 1. Failure criterion ; IR > 50 µA at VR = 10 V 2.
