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2SA836 Datasheet PDF

Hitachi 2SA836

The 2SA836 is grouped by hFE as follows.
Part No. 2SA836
Datasheet 2SA836 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA836 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 200 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –55 –5 — — 1 Typ — — — — — — –0.1 –0.66 200 2.0 1 0.5 Max — — — –100 –50 500 –0.5 –0.75 — — 5 1 Unit V V V nA nA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figuer V(BR)EBO I CBO I EB...
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