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2SA836 Datasheet PDF

Renesas Electronics 2SA836

The 2SA836 is grouped by hFE as follows.
Part No. 2SA836
Datasheet 2SA836 Download
Manufacturer
Renesas Electronics
Description Silicon PNP Transistor
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2SA836 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 200 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SA836

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min –55 –55 –5 — — 160 — — — — — — Typ — — — — — — –0.1 –0.66 200 2.0 1 0.5 Max — — — –100 –50 500 –0.5 –0.75 — — 5 1 Unit V V V nA nA V V MHz pF dB dB Test conditions IC = –10 µA, IE = 0 IC =...
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