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2SA844 Datasheet PDF

Hitachi 2SA844

The 2SA844 is grouped by hFE as follows.
Part No. 2SA844
Datasheet 2SA844 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA844 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –55 –5 — — 1 Typ — — — — — — –0.1 –0.66 200 2.0 Max — — — –100 –50 800 –0.5 –0.75 — — Unit V V V nA nA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: C 160 to 320 D 250 to 500 E 400 to 8...
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